%A Matsuura, Hideharu %D 2017 %T Investigation of Electron-Irradiation Damage in Silicon Carbide by Hall-Effect Measurements %K %X We review changes of the majority-carrier concentration and mobility in SiC by irradiation of high-energy electrons using Hall-effect measurements, instead of deep level transient spectroscopy (DLTS) that can detect changes of defect densities much lower than the majority-carrier concentration. The hole concentration ( p ) in Al-doped p-type SiC was decreased by irradiation of electrons with over 150 keV.  This decrement of p is found to result from a decrement of Al acceptors with an acceptor level ( E _A ) of E _V+0.22 eV , not from a creation of defects or hole traps, e.g., C vacancies.  Because irradiation of electrons with approximately 200 keV can displace only C atoms at lattice sites, neither Si nor Al atoms, one of four C atoms bonded with an Al atom at a Si-sublattice site is displaced by the irradiation, resulting that the Al atom at the Si-sublattice site cannot behave as a shallow acceptor, and is changed to a deep acceptor with E _A of E _V+0.38eV . Compared with a large decrement of p , the degradation of the hole mobility is small. In N-doped n-type SiC, the density of N donors at hexagonal C-sublattice sites ( N _NH ) with a donor level ( E _D ) of E _C-0.07 eV is reduced much more than the density of N donors at cubic C-sublattice sites ( N _NK ) with E _D of E _C-0.12 eV . As a result, the decrement of the electron concentration in N-doped n-type SiC by electron irradiation comes mainly from a decrement of N _NH . %U https://esmed.org/MRA/qpr/article/view/1576 %J Quarterly Physics Review %0 Journal Article %V 3 %N 3 %@ 2572-701X %8 2017-10-16