The volume concentration-recombination mechanism responsible for negative current sensitivity
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Abstract
The operation of dual collector magnetotransistors has been studied to increase collector sensitivity. To analyze the electrical characteristics and sensor performances of these machines, the complete device structure has been modeled using technological and physical parameters extracted from actual experimental measurements. Through this, joining the contacts of the base and well has been shown to create an operating threshold, negative magnetosensitivity, and an increased sensitivity to weak magnetic fields. Furthermore, magnetic fields are shown to cause a volumetric concentration-recombination that causes a negative sensitivity in the electron-hole plasma. However, lateral bipolar magnetotransistors with bases and wells have shown the most significant increases (up to 2000 V/T) in magnetosensitivity.
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